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 DSS20200L
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
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Features
* * * * * Ideal for Medium Power Amplification and Switching Ultra Low Collector-Emitter Saturation Voltage Complimentary NPN Type Available (DSS20201L) Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)
Mechanical Data
* * * * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish -- Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate)
C
NEW PRODUCT
B
Top View
E
Device Schematic
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC Value -20 -20 -7 -4 -2 Unit V V V A A
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Collector Current Continuous Collector Current
Thermal Characteristics
Characteristic Power Dissipation (Note 3) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25C Power Dissipation (Note 4) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25C Operating and Storage Temperature Range
Notes: 1. 2. 3. 4.
Symbol PD RJA PD RJA TJ, TSTG
Value 600 209 1.2 104 -55 to +150
Unit mW C/W mW C/W C
No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
DSS20200L
Document number: DS31604 Rev. 2 - 2
1 of 5 www.diodes.com
December 2008
(c) Diodes Incorporated
DSS20200L Electrical Characteristics
@TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -20 -20 -7 250 250 180 150 100 Typ -50 -100 -80 40 Max -100 -100 -13 -90 -120 -180 90 -0.9 -0.9 100 330 180 60 120 430 300 130 Unit V V V nA nA Test Conditions IC = -100A IC = -10mA IE = -100A VCB = -20V, IE = 0 VEB = -7V, IC = 0 VCE = -2V, IC = -10mA VCE = -2V, IC = -500mA VCE = -2V, IC = -1A VCE = -2V, IC = -2A IC = -0.1A, IB = -10mA IC = -1A, IB = -100mA IC = -1A, IB = -10mA IC = -2A, IB = -200mA IC = -2A, IB = -200mA IC = -1A, IB = -10mA VCE = -2V, IC = -1A VCE = -5V, IC = -100mA, f = 100MHz VCB = -3V, f = 1MHz VEB = -0.5V, f = 1MHz VCC = -15V, IC = -750mA, IB1 = -15mA VCC = -15V, IC = -750mA, IB1 = IB2 = -15mA
NEW PRODUCT
Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(SAT) RCE(SAT) VBE(SAT) VBE(ON) fT Cobo Cibo ton td tr toff ts tf
mV
Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS Transition Frequency Output Capacitance Input Capacitance SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
Notes:
m V V MHz pF pF ns ns ns ns ns ns
5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
1.6 1.4
10
PD, POWER DISSIPATION (W)
-IC, COLLECTOR CURRENT (A)
1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature
(Note 3) (Note 4)
1
Pw = 10ms
Pw = 100ms
0.1
DC
0.01
0.001 0.1
1 10 100 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
DSS20200L
Document number: DS31604 Rev. 2 - 2
2 of 5 www.diodes.com
December 2008
(c) Diodes Incorporated
DSS20200L
2.0 1.8 -IC, COLLECTOR CURRENT (A)
hFE, DC CURRENT GAIN 1,000
T A = 150C
1.6 1.4 1.2 1.0 0.8 0.6 0.4
IB = -1mA IB = -2mA IB = -5mA IB = -4mA
T A = 85C TA = 25C
T A = -55C
IB = -3mA
100
NEW PRODUCT
VCE = -2V
0.2 0 0 2 4 6 8 10 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
10 0.1 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current
1
IC/IB = 10
1.2
VCE = -2V
-VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
1.0
0.1
T A = 150C T A = 85C
0.8
TA = -55C
0.6
TA = 25C
0.01
TA = 25C TA = -55C
0.4
T A = 85C T A = 150C
0.2
0.001 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current
IC/IB = 10
0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1.2
1,000
f = 1MHz
1.0
0.8
TA = -55C
CAPACITANCE (pF)
100
Cibo
0.6
T A = 25C TA = 85C
Cobo
0.4
TA = 150C
10
0.2
0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current
1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Capacitance Characteristics
DSS20200L
Document number: DS31604 Rev. 2 - 2
3 of 5 www.diodes.com
December 2008
(c) Diodes Incorporated
DSS20200L
1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz)
100
NEW PRODUCT
10
VCE = -5V f = 100MHz
1 0 10 20 30 40 50 60 70 80 90 100 -IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Gain-Bandwidth Product vs. Collector Current
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.05
D = 0.9 RJA(t) = r(t) * RJA RJA = 166C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005 t1
D = Single Pulse
t2 T J - T A = P * RJA(t) Duty Cycle, D = t1/t2
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response
10
100
1,000
Ordering Information
Part Number DSS20200L-7
Notes:
(Note 6) Case SOT-23 Packaging 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ZP1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September)
ZP1
Date Code Key Year Code Month Code
2008 V Jan 1 Feb 2
2009 W Mar 3
2010 X Apr 4 May 5
YM
2011 Y Jun 6
2012 Z Jul 7 Aug 8
2013 A Sep 9
2014 B Oct O Nov N
2015 C Dec D
DSS20200L
Document number: DS31604 Rev. 2 - 2
4 of 5 www.diodes.com
December 2008
(c) Diodes Incorporated
DSS20200L Package Outline Dimensions
A
BC
NEW PRODUCT
H K D J F G L M
K1
SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm
Suggested Pad Layout
Y Z
C
Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DSS20200L
Document number: DS31604 Rev. 2 - 2
5 of 5 www.diodes.com
December 2008
(c) Diodes Incorporated


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